Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT
Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT
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DOI：
10.1109/wipdaeurope55971.2022.9936475
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发表时间：
2022-09
期刊：
影响因子：
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通讯作者：
Ioannis Almpanis;P. Evans;M. Antoniou;P. Gammon;L. Empringham;F. Udrea;P. Mawby;N. Lophitis
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文献类型：
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作者：
Ioannis Almpanis;P. Evans;M. Antoniou;P. Gammon;L. Empringham;F. Udrea;P. Mawby;N. Lophitis
本文提出了一个全面的短路鲁棒性研究4 H-碳化硅（SiC）n型绝缘栅双极晶体管（nIGBT）的中压和高压应用。数值模拟评估IGBT的短路行为在各种条件下和设备参数的变化。器件内部电流密度和温度分布表明，当p阱/n发射极界面区的器件温度为1500 K时，寄生晶闸管闭锁和热辅助漏电流的产生是SiC nIGBT的失效机理。
This paper presents a comprehensive short-circuit robustness investigation of 4H- Silicon Carbide (SiC) n-type Insulated Gate Bipolar Transistors (nIGBTs) for Medium-Voltage and High- Voltage applications. Numerical electrothermal TCAD simulations evaluate the IGBT short-circuit behaviour under various conditions and device parameters variation. The internal device current density and temperature distribution show that the parasitic thyristor latch-up and the thermally-assisted leakage current generation can be the failure mechanism of SiC nIGBT when the device temperature in the p-well/n-emitter interface region is about 1500K.