The effect of strained confinement layers in InP self-assembled quantum dot material
The effect of strained confinement layers in InP self-assembled quantum dot material
复制标题
InP自组装量子点材料中应变限制层的影响
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
R. Beanland
中科院分区：
文献类型：
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作者：
S. Elliott;P. Smowton;A. Krysa;R. Beanland
我们研究了一系列自组装 InP 量子点结构。 GaxIn(1−x)P 上限制量子阱层的 Ga 浓度从 x = 0.43 变化到 x = 0.58，以应变补偿结构为中心。所有这些都生长在 (Al0.3Ga0.7)0.52In0.48P 下限制层上。在此成分范围内，点发射波长随 Ga 分数近似线性变化。在所使用的组合物中，x = 0.54 给出了最佳定义和最大幅度的点吸收光谱，对应于最大的点密度。这导致了最低的总体阈值电流密度，并且在室温及以上温度下阈值电流温度敏感性降低。这些结果在两个生长系列中得到证实。
We investigated a series of self-assembled InP quantum dot structures. The Ga concentrations of the GaxIn(1−x)P upper confining quantum well layers were varied from x = 0.43 to x = 0.58, centering on a strain compensated structure. All were grown on a (Al0.3Ga0.7)0.52In0.48P lower confinement layer. Across this range of composition the dot emission wavelength changed approximately linearly with the Ga fraction. Of the compositions used, x = 0.54 gave the best defined and largest magnitude dot absorption spectrum, corresponding to the largest dot density. This resulted in the lowest overall threshold current density with a reduced threshold current temperature sensitivity at room temperature and above. These results are confirmed over two growth series.