Static and dynamic characterization of AlN and nanocrystalline diamond membranes
Static and dynamic characterization of AlN and nanocrystalline diamond membranes
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AlN 和纳米晶金刚石膜的静态和动态表征
DOI：
10.1002/pssa.201228180
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
V. Lebedev
中科院分区：
文献类型：
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作者：
F. Knoebber;Verena Zürbig;N. Heidrich;J. Hees;R. E. Sah;M. Baeumler;S. Leopold;D. Paetz;O. Ambacher;V. Lebedev
在这项工作中，AlN和纳米金刚石薄膜以及在其基础上的多层结构对其力学性能进行了表征。特别地，杨氏模数E和残余应力σ是通过薄膜的晶圆弯曲测量以及自立膜的鼓胀实验和振动测量得到的。根据生长条件的不同，反应磁控溅射制备的氮化铝薄膜的σ ∼ +300值为+400 Mpa，E ∼ 为370 GPa.而微波等离子体化学气相沉积生长的金刚石薄膜的σ ∼ −为60~+60 Mpa，E ∼ 870为1000 GPa.讨论了所使用的表征技术的价值和准确性，并展示了它们的局限性。
In this work, AlN and nanocrystalline diamond thin films as well as multi‐layer structures on their basis are characterized towards their mechanical properties. In particular, the Young's modulus E and the residual stress σ are obtained by wafer bow measurements of thin films as well as by bulge experiments and vibration measurements of freestanding membranes. Depending on the growth conditions, the AlN thin films, deposited by reactive magnetron sputtering, revealed values of σ ∼ +300 up to +400 MPa and E ∼ 370 GPa, while the diamond films, grown by microwave plasma CVD, showed values of σ ∼ −60 to +60 MPa and E ∼ 870 up to 1000 GPa. The values and the accuracy of the characterization techniques used are discussed and their limits are demonstrated.