Monolithic Integration of Membrane-based Butt-jointed Built-in DFB Lasers and PIN Photodiodes Bonded on Si Substrate
Monolithic Integration of Membrane-based Butt-jointed Built-in DFB Lasers and PIN Photodiodes Bonded on Si Substrate
复制标题
基于薄膜对接内置 DFB 激光器和 PIN 光电二极管的单片集成键合在硅基板上
DOI：
10.1109/jstqe.2015.2435898
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发表时间：
2015
影响因子：
4.9
通讯作者：
Shigehisa Arai
中科院分区：
文献类型：
--
作者：
Daisuke Inoue;Takuo Hiratani;Yuki Atsuji;Takahiro Tomiyasu;Tomohiro Amemiya;Nobuhiko Nishiyama;Shigehisa Arai
我们展示了横向电流注入 (LCI) 型膜基分布式反馈 (DFB) 激光器和 p-i-n-光电二极管 (PD) 的单片集成，使用苯并环丁烯将对接内置 (BJB) 结构粘合在 Si 基板上。集成到膜光学器件中的BJB结构是通过有机金属气相外延制备的。采用表面光栅结构和λ/4位移区的强折射率耦合DFB激光器，在室温连续波条件下获得了280 μA的阈值电流。 p-i-n-PD在-1 V偏置电压下获得了0.8 nA的低暗电流，其光电流特性与薄膜DFB激光器的光输出特性一致。
We demonstrate a monolithic integration of lateral-current-injection (LCI)-type membrane-based distributed-feedback (DFB) lasers and p-i-n-photodiodes (PDs) using a butt-jointed built-in (BJB) structure bonded on a Si substrate using benzocyclobutene. The BJB structure to be integrated to the membrane optical devices was prepared by organometallic vapor-phase epitaxy. A threshold current of 280 μA was obtained under a room-temperature continuous-wave condition by adopting a strongly index-coupled DFB laser with a surface grating structure and a λ/4-shift region. A low dark current of 0.8 nA was obtained with the p-i-n-PD at a bias voltage of -1 V, and its photocurrent property coincided with the light output property of the membrane DFB laser.