Evolution of the electronic structure in ultrathin Bi(111) films
Evolution of the electronic structure in ultrathin Bi(111) films
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DOI：
10.1103/physrevb.91.205414
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发表时间：
2015-05
影响因子：
3.7
通讯作者：
L. Miao;M. Yao;Wenmei Ming;F. Zhu;C. Han;Zhengfei Wang;D. Guan;C. Gao;Canhua Liu;Feng L
中科院分区：
文献类型：
--
作者：
L. Miao;M. Yao;Wenmei Ming;F. Zhu;C. Han;Zhengfei Wang;D. Guan;C. Gao;Canhua Liu;Feng L
By combining angle-resolved photoemission spectroscopy and first-principles calculations, we systematically studied the electronic structures of ultrathin Bi(111) films (bilayers) epitaxially grown on. High-resolution low-energy band dispersions and Fermi surfaces of ultrathinfilms as a function of thickness were experimentally determined. Our results also indicate that the electronic structures of epitaxial Bi films are strongly influenced by the substrate compared with freestanding films. The substrate effects mainly include two aspects. First, the in-plane lattice constant of Bi(111) films is compressed, which increases the bandwidth of the surface-state-like bands. Furthermore, the band dispersion near thepoint is significantly modified as well. Second, there exists a strong hybridization at theinterface, and the hybridization effects spatially extend to three Bi bilayers.
