High-efficiency X-band MMIC GaN power amplifiers with supply modulation
High-efficiency X-band MMIC GaN power amplifiers with supply modulation
复制标题
具有电源调制功能的高效 X 波段 MMIC GaN 功率放大器
DOI:
10.1109/mwsym.2014.6848545
复制
发表时间:
2014
期刊:
影响因子:
--
通讯作者:
Z. Popovic
中科院分区:
文献类型:
--
作者:
Andrew H. Zai;Dongxue Li;Scott Schafer;Z. Popovic
This paper presents measurement results on supply-modulated X-band 0.15μm gate width GaN HEMT MMIC power amplifiers for OFDM signals. Two PAs at 10GHz with 4 and 10W output powers show peak CW efficiencies of 69% and 55%, with gains of 8.5 and 20.4 dB respectively. Supply modulation trajectories are designed by static characterization of each MMIC PA, and the drain modulation is performed though both a linear broadband modulator and a high-efficiency 5-MHz switching modulator. The PAs are tested in four modes: (1) with a constant 20-V supply and the 18-MHz OFDM signal input through the drive; (2) pure envelope tracking; (3) signal-split supply modulation; and (4) envelope elimination and restoration (EER) with a 5-MHz switching modulator. Average PAE and composite power added efficiencies are compared, reaching 65.4% and 35%, respectively, with the 4-W PA and a linear modulator.