Transport and Raman studies of the group IV layered compounds and their lithium intercalates: LixTiS2, LixTiSe2, LixZrS2, LixZrSe2, LixHfS2 and LixHfSe2

Transport and Raman studies of the group IV layered compounds and their lithium intercalates: LixTiS2, LixTiSe2, LixZrS2, LixZrSe2, LixHfS2 and LixHfSe2
复制标题

DOI:
10.1080/13642818708220162
复制
发表时间:
1987-11
期刊:
Philosophical Magazine Part B
影响因子:
--
通讯作者:
P. Klipstein;C. Pereira;R. Friend
P. Klipstein;C. Pereira;R. Friend
中科院分区:
其他
文献类型:
--
作者:
P. Klipstein;C. Pereira;R. Friend

文献摘要

被引文献

相似文献

摘要对不同IV族过渡金属二硫属化合物MX2的嵌锂配合物LixMX 2在嵌锂过程中和嵌锂停止后的电阻率和霍尔系数进行了测量。平衡样品的结果作为温度和锂浓度的函数呈现。在一些材料中,在锂浓度0 < x < 1的整个范围内观察到金属行为,而在其他材料中,仅在高于某个临界锂浓度时观察到金属行为。在高锂浓度下,在低温下在某些材料中观察到弱输运异常,这可能与锂有序化或层内周期性晶格畸变(PLD)有关。存在于等电子V族材料IT-TaS 2中的强PLD的缺乏似乎与锂诱导的声子硬化无关,因为在嵌入时观察到拉曼活性声子的频率只有很小的变化。
Abstract Resistivity and Hall coefficient measurements have been made on the lithium intercalation complexes, LixMX2, of various group IV transition-metal dichalcogenides, MX2, both during the intercalation process and after intercalation has ceased. Results for equilibrated samples are presented as a function of temperature and lithium concentration. In some materials, metallic behaviour is observed over the whole range of lithium concentration 0 < x < 1, while in others it is only observed above some critical lithium concentration. At high lithium concentrations, weak transport anomalies are seen in some materials at low temperatures, which may be related to lithium ordering or to an intralayer periodic lattice distortion (PLD). The absence of a strong PLD which exists in the isoelectronic group V material IT-TaS2 does not appear to be related to lithium-induced phonon stiffening since only small shifts in the frequencies of the Raman-active phonons are observed on intercalation.