Characterization of SU-8 as a photoresist for electron-beam lithography
Characterization of SU-8 as a photoresist for electron-beam lithography
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SU-8 作为电子束光刻光刻胶的表征
DOI：
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发表时间：
2003
期刊：
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通讯作者：
Jeong‐Bong Lee
中科院分区：
文献类型：
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作者：
A. Nallani;S. Park;Jeong‐Bong Lee
电子束光刻（EBL）广泛用于亚微米和纳米尺度图案的图案化。使用EBL已经成功地实现了数十纳米量级的图案。对于微电子和其他应用，在亚微米和纳米尺度上对高深宽比结构的需求日益增加。传统上，亚微米和纳米尺度的高深宽比结构已经通过精密光刻技术和随后的干法蚀刻技术来实现。在这项工作中，我们提出了市售SU-8作为一个潜在的抗蚀剂，可用于直接抗蚀剂图案化的高纵横比结构在亚微米和纳米尺度。这种抗蚀剂图案可以用作聚合物模具，以使用电镀技术产生高纵横比的金属亚微米和纳米尺度结构。与最常用的EBL抗蚀剂PMMA（聚甲基丙烯酸甲酯）相比，SU-8在相同厚度下所需的曝光剂量减少了100~150倍。它导致EBL处理时间的显著减少。在本文中，高达4：1的纵横比SU-8结构的图案化的最小特征尺寸为500 nm的表征结果的报告。此外，还报道了利用电镀技术制备高深宽比金属亚微米结构的初步结果。
Electron beam lithography (EBL) is widely used for patterning of sub-micron and nano-scale patterns. Patterns in the order of tens of nano meters have been successfully realized using EBL. There are increasing needs in high aspect ratio structures in sub-micron and nano scales for microelectronics and other applications. Traditionally, high aspect ratio structures in sub-micron and nano scales have been realized by precision lithography techniques and subsequent dry etch techniques. In this work, we present commercially available SU-8 as a potential resist that can be used for direct resist patterning of high aspect ratio structures in sub-micron and nano scales. Such resist pattern can be used as a polymeric mold to create high aspect ratio metallic sub-micron and nano scales structures using electroplating technology. Compared to the most commonly used EBL resist, PMMA (poly methylmethacrylate), SU-8 requires a factor of 100~150 less exposure doses for equal thickness. It results in a significant reduction of EBL processing time. In this paper, characterization results on the patterning of up to 4:1 aspect ratio SU-8 structures with minimum feature size of 500 nm is reported. In addition, preliminary results on high aspect ratio metallic sub-micron structures using electroplating technology are also reported.