Radiation damage effects in Si materials and detectors and rad-hard Si detectors for SLHC
Radiation damage effects in Si materials and detectors and rad-hard Si detectors for SLHC
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DOI：
10.1088/1748-0221/4/03/p03011
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发表时间：
2009-03-01
影响因子：
1.3
通讯作者：
Li, Z.
中科院分区：
文献类型：
--
作者：
Li, Z.
硅传感器广泛应用于高能和核物理实验中，受到严重的辐射损伤，导致传感器性能下降。这些退化包括漏电流、体电阻率、空间电荷浓度和自由载流子俘获的显著增加。对于LHC应用，其中10年的总通量为1x 10（15）n（eq）/cm（2）的量级，空间电荷浓度的增加一直是主要问题，因为它可以显著增加传感器完全耗尽电压，如果在高偏压下操作，则会导致击穿，或者如果在低于完全耗尽的偏压下操作，则会导致电荷收集损失。然而，对于LHC升级或SLHC，总通量增加至1x 10（16）n（eq）/cm（2），Si探测器操作的主要限制因素是辐射诱导缺陷能级对自由载流子的严重捕获。已经开发了几种新的方法来使Si探测器对这种超高辐射更具辐射硬/耐受性，包括3D Si探测器、电流注入二极管（CID）探测器和高温退火。
Silicon sensors, widely used in high energy and nuclear physics experiments, suffer severe radiation damage that leads to degradations in sensor performance. These degradations include significant increases in leakage current, bulk resistivity, space charge concentration, and free carrier trapping. For LHC applications, where the total fluence is in the order of 1x10(15) n(eq)/cm(2) for 10 years, the increase in space charge concentration has been the main problem since it can significantly increase the sensor full depletion voltage, causing either breakdown if operated at high biases or charge collection loss if operated at lower biases than full depletion. For LHC Upgrade, or the SLHC, however, whit an increased total fluence up to 1x10(16) n(eq)/cm(2), the main limiting factor for Si detector operation is the severe trapping of free carriers by radiation-induced defect levels. Several new approaches have been developed to make Si detector more radiation hard/tolerant to such ultra-high radiation, including 3D Si detectors, Current-Injected-Diodes (CID) detectors, and Elevated temperature annealing.