Mechanism of material removal through transient and selective laser absorption into excited electrons in fused silica

Mechanism of material removal through transient and selective laser absorption into excited electrons in fused silica
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DOI:
10.1063/5.0049195
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发表时间:
2021-08
影响因子:
3.2
通讯作者:
Reina Yoshizaki;Yusuke Ito;Shunya Yoshitake;Chao-Chen Wei;Akihiro Shibata;I. Nagasawa;K. Nagato;N. Sugita
Reina Yoshizaki;Yusuke Ito;Shunya Yoshitake;Chao-Chen Wei;Akihiro Shibata;I. Nagasawa;K. Nagato;N. Sugita
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Reina Yoshizaki;Yusuke Ito;Shunya Yoshitake;Chao-Chen Wei;Akihiro Shibata;I. Nagasawa;K. Nagato;N. Sugita

文献摘要

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瞬态选择性激光(TSL)加工是一种用于快速制造透明材料的方法。在这种方法中,玻璃中的电子被超短脉冲激光激发。这个电子激发区域选择性地吸收低强度的长脉冲激光,从而实现微加工。然而,TSL加工过程中材料去除的机制尚未完全被理解。在这项研究中,我们测量了合成熔融石英中TSL加工的阈值,以探究加工机制的细节。测量结果表明,加工阈值由长脉冲激光的强度与飞秒激光激发的电子密度之间的关系表示。计算表明,合成熔融石英中的吸收主要是由于长脉冲激光对激发电子的线性吸收,并且一个简单的阈值模型可用于解释材料去除量。从确定的阈值函数中揭示的控制因素将使TSL加工过程中的形状得以控制。
Transient and selective laser (TSL) processing is a method used for the rapid fabrication of transparent materials. In this method, electrons in glass are excited by an ultrashort-pulse laser. This electron-excited region selectively absorbs a long-pulse laser with low intensity, resulting in microfabrication. However, the mechanism of material removal during TSL processing is not completely understood. In this study, we measured the threshold of TSL processing in synthetic fused silica to investigate the details of the processing mechanism. The measurement revealed that the processing threshold was represented by the relationship between the intensity of the long-pulse laser and the electron density excited by the femtosecond laser. The calculations indicated that the absorption in synthetic fused silica was mainly due to linear absorption of the long-pulse laser into the excited electrons and that a simple threshold model can be used to explain the material removal volume. The revealed controlling factor from the identified threshold function will allow the shapes to be controlled during TSL processing.