Modelling results of avalanche multiplication in AlGaAs soft X-ray APDs
Modelling results of avalanche multiplication in AlGaAs soft X-ray APDs
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DOI：
10.1016/j.nima.2010.10.022
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发表时间：
2011-01-11
影响因子：
1.4
通讯作者：
Gomez, R. B.
中科院分区：
文献类型：
--
作者：
Barnett, A. M.;Lees, J. E.;Gomez, R. B.
首先给出了用Al_(0.8)Ga_(0.2)As p(+)-p(-)-n(+)X射线光子计数雪崩光电二极管模拟X射线能谱的结果，并与实验数据进行了比较。特别注意通过实验观察到的现象，即来自放射性同位素源的光谱中存在一个额外的峰，虽然以前报告了这一现象，但没有得到充分解释。额外的峰值是由于p(+)和p(-)层中吸收的光子所产生的载流子所经历的乘积的不均匀分布造成的。讨论了这一效应对未来AlGaAsX射线光子计数雪崩光电二极管设计的影响。(C)2010爱思唯尔B.V.保留所有权利。
First results from a new simple simulation of X-ray spectroscopy with an Al0.8Ga0.2As p(+)-p(-)-n(+) spectroscopic X-ray photon counting avalanche photodiode are presented and compared with experimentally obtained data. Particular attention is paid to the experimentally observed phenomenon of an additional peak being present in the spectrum from a radioisotope source that, whilst previously reported, had not been fully explained. The additional peak is shown to result from the unequal distributions of multiplications undergone by the charge carriers created by photons absorbed in the p(+) and p(-) layers. The consequences of this effect for future AlGaAs X-ray photon counting avalanche photodiode designs are discussed. (C) 2010 Elsevier B.V. All rights reserved.