Controlled Construction of Atomic Point Contact with 16 Quantized Conductance States in Oxide Resistive Switching Memory
Controlled Construction of Atomic Point Contact with 16 Quantized Conductance States in Oxide Resistive Switching Memory
复制标题
氧化物电阻开关存储器中16个量化电导态原子点接触的受控构建
DOI：
10.1021/acsaelm.9b00191
复制
发表时间：
2019-05-01
影响因子：
4.7
通讯作者：
Li, Run-Wei
中科院分区：
文献类型：
--
作者：
Chen, Qilai;Liu, Gang;Li, Run-Wei
通过控制导电丝的形成和演化的电阻开关器件具有巨大的能力，可以被微型化到原子尺度，用于构建高密度存储器阵列甚至存储器中的计算结构。尽管基于离子迁移和电化学的开关机制已被阐明，但精确控制演化动力学仍然是阻碍存储器件直接应用的一个挑战。在这一贡献中，我们提出了一种有效的扫描探针显微镜针尖辅助方法来调节氧化物基阻开关器件的性能。利用电压偏置扫描探针显微镜(SPM)针尖作为微电极，调节氧离子在纳米薄膜中的定向迁移，从而在开关矩阵内部故意形成单丝，大大提高了存储器件的稳定性和可靠性。开关参数的变化，例如编程电压和通断电阻，至少减少了33%。更重要的是，细丝尺寸的精心调整还导致了阻性开关器件中的单个原子点接触，产生了至少16个半整数倍的量子化电导态，可用于多级数据存储和高阶神经形态计算范式。
A resistive switching device with controlled formation and evolution of conductive filament possesses great capability of being miniaturized to atomic scale for the construction of high-density memory arrays and even in-memory computing architectures. Although the switching mechanism based on ion migration and electrochemistry has been clarified, precise control of the evolution dynamics is still a challenge that hinders the direct application of the memory devices. In this contribution, we propose an effective scanning probe microscope tip-assisted approach for the performance modulation of oxide-based resistive switching devices. The directional migration of oxygen anions inside the hafnium oxide nanofilm is regulated by using the voltage-biased scanning probe microscope (SPM) tip as a microelectrode, so that a single filament would be formed deliberately inside the switching matrix to greatly improve the stability and reliability of the memory device. The variations of the switching parameters, e.g. programming voltages and ON/OFF resistances, have been reduced by at least 33%. More importantly, the elaborate tuning of the filament dimension also gives rise to single atomic point contact in the resistive switching device, producing at least 16 half-integer multiples of quantized conductance states that can be used for multilevel data storage and high-order neuromorphic computing paradigm.