High-frequency negative-resistance circuit principles for Esaki diode applications
High-frequency negative-resistance circuit principles for Esaki diode applications
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Esaki 二极管应用的高频负阻电路原理
DOI：
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发表时间：
1960
期刊：
影响因子：
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通讯作者：
M. Hines
中科院分区：
文献类型：
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作者：
M. Hines
提出了利用 Esaki 或隧道二极管等简单负阻元件分析和设计高频放大器和振荡器的某些基本原理。本文的第一部分介绍了使用单个负阻二极管进行振荡和放大所需的条件，包括稳定性标准、增益和带宽。结果表明，最高频率的电路需要尺寸非常小的二极管，因此单点二极管的功率容量非常低。为了在高频下获得更高的功率，必须使用分布式电路，或者具有窄带二极管或者多个小点二极管。这种电路在抑制不需要的振荡模式方面存在特殊的稳定性问题。针对单端口振荡器电路和行波放大器电路提出了避免此类困难的方法。在后一种情况下，建议使用旋磁类型的不可逆衰减。
Certain fundamental principles are presented for analyzing and designing high-frequency amplifiers and oscillators utilizing simple negative resistance elements such as the Esaki or tunnel diodes. The first part of the paper covers the conditions necessary for oscillation and amplification with a single negative-resistance diode, including stability criteria, gain and bandwidth. It is shown that the highest-frequency circuits require diodes with very small dimensions, so that a single-spot diode will have a very low power capacity. In order to obtain higher power at high frequencies, distributed circuits must be used, either with narrow-strip diodes or a multiplicity of small spot diodes. Such circuits present special stabilization problems in suppressing unwanted modes of oscillation. Methods of avoiding such difficulties are presented for one-port oscillator circuits and for traveling-wave amplifier circuits. In the latter case, nonreciprocal attenuation of the gyromagnetic type is recommended.