Performance of focusing mirror device in EUV beamline of SPring-8 Compact SASE Source (SCSS)

Performance of focusing mirror device in EUV beamline of SPring-8 Compact SASE Source (SCSS)
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DOI：
10.1016/j.nima.2010.11.174
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发表时间：
2011-09
期刊：
Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
影响因子：
1.4
通讯作者：
H. Ohashi;Y. Senba;M. Nagasono;M. Yabashi;K. Tono;T. Togashi;T. Kudo;H. Kishimoto;T. Miura;H. Kimura;T. Ishikawa
H. Ohashi;Y. Senba;M. Nagasono;M. Yabashi;K. Tono;T. Togashi;T. Kudo;H. Kishimoto;T. Miura;H. Kimura;T. Ishikawa
中科院分区：
物理与天体物理3区
文献类型：
--
作者：
H. Ohashi;Y. Senba;M. Nagasono;M. Yabashi;K. Tono;T. Togashi;T. Kudo;H. Kishimoto;T. Miura;H. Kimura;T. Ishikawa

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在SPring-8紧凑型SASE光源（SCSS）的极紫外（EUV）光束线上设计并安装了聚焦镜装置。在波长为60nm处，测得光束在焦点处的水平和垂直尺寸分别为22和26μm，工作距离为0.94m。实现了超过20TW/cm2的高功率密度。研究了硅、金刚石和钽等材料的烧蚀特性，以确定单次辐照的聚焦光束轮廓。
A focusing mirror device was designed and installed in an extreme ultraviolet (EUV) beamline of the SPring-8 Compact SASE Source (SCSS). The horizontal and vertical sizes of the beam at the focal point were measured to be 22 and 26μm with a working distance of 0.94m at a wavelength of 60nm. A high power density over 20TW/cm2was achieved. Ablation properties of some materials such as silicon, diamond and tantalum have been studied for determining the focused beam profile with a single shot irradiation.