AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AIN template using MOVPE
AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AIN template using MOVPE
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使用 MOVPE 在高质量 AlN 模板上生长的 AlGaN 基深紫外发光二极管
DOI：
10.1016/j.jcrysgro.2014.10.015
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发表时间：
2015-03-15
影响因子：
1.8
通讯作者：
Li, Jinmin
中科院分区：
文献类型：
--
作者：
Yan, Jianchang;Wang, Junxi;Li, Jinmin
在这篇文章中，我们报道了高质量的氮化铝薄膜的生长使用金属有机物气相外延。在高温氮化铝生长过程中引入了三层中温氮化铝。在MT-AlN层生长过程中，每生长5 nm MT-AlN后，关闭铝源和氮源6 s，同时始终通入H2载气，蓝宝石衬底上AlN外延层中的穿透位错密度降低了近一半。在AlN/蓝宝石模板的基础上进一步制备了AlGaN基深紫外发光二极管。在20 mA驱动电流下，发射峰值波长为284.5 nm，光输出功率超过3 mW。(C)2014爱思唯尔有限公司版权所有。
In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AIN were introduced during the high-temperature (HT) AIN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H-2 carrier gas was always on. The threading dislocation density in an AIN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW. (C) 2014 Elsevier B.V. All rights reserved.