Comparison of degradation caused by dislocation motion in compound semiconductor light-emitting devices
Comparison of degradation caused by dislocation motion in compound semiconductor light-emitting devices
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DOI：
10.1063/1.118523
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发表时间：
1997-03
影响因子：
4
通讯作者：
L. Sugiura
中科院分区：
文献类型：
--
作者：
L. Sugiura
估算了 GaAlAs/GaAs、InGaAsP/InP 和 GaN 基发光器件中的位错滑移速度。这些结果与位错运动相关的器件退化率一致。研究表明，高位错密度GaN基器件的长寿命主要归因于位错迁移率极小，部分归因于位错运动的剪切应力小，以及辐射增强效应很小。
Dislocation glide velocities in GaAlAs/GaAs, InGaAsP/InP, and GaN-based light-emitting devices are estimated. These results are consistent with device degradation rates related to dislocation motion. It is clarified that the long lifetime of GaN-based devices with high dislocation density is principally due to extremely small dislocation mobility, partly due to small shear stress for dislocation motion, and due little to the radiation enhancement effect.