Recent advances in electron-beam lithography for the high-volume production of VLSI devices
Recent advances in electron-beam lithography for the high-volume production of VLSI devices
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用于大规模生产 VLSI 器件的电子束光刻技术的最新进展
DOI：
10.1109/t-ed.1979.19475
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发表时间：
1979
影响因子：
3.1
通讯作者：
H. C. Pfeiffer
中科院分区：
文献类型：
--
作者：
H. C. Pfeiffer
扫描电子束光刻技术的最新进展已经使连续曝光的效率比基本的SEM方法提高了几个数量级。联合收割机投影和扫描技术相结合的成形束系统已被开发用于各种光刻应用。IBM的第一代电子束生产系统已经证明了成形束技术在制造条件下的可行性。更先进的成形技术，如VSS和字符投影提供的手段，使高分辨率的VLSI光刻技术和经济可行的。
Recent advances in scanning-electron-beam lithography techniques have increased the efficiency of serial exposure by several orders of magnitude over the basic SEM approach. A spectrum of shaped-beam systems which combine projection and scanning techniques has been developed for various lithographic applications. The first generation of electron-beam production systems at IBM have demonstrated the feasibility of the shaped-beam technique under manufacturing conditions. More advanced shaping techniques such as VSS and Character Projection provide the means to make a high-resolution lithography for VLSI technically and economically feasible.