Strain-Induced Back Channel Electron Mobility Enhancement in Poly-Si TFTs Formed by Continuous-Wave Laser Lateral Crystallization
Strain-Induced Back Channel Electron Mobility Enhancement in Poly-Si TFTs Formed by Continuous-Wave Laser Lateral Crystallization
复制标题
连续波激光横向结晶形成的多晶硅 TFT 中应变诱导背沟道电子迁移率增强
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
and Takashi Ito
中科院分区：
文献类型：
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作者：
Suntaro Fujii;Shin-Ichiro Kuroki;Koji Kotani;and Takashi Ito
