Self-heating effect in FinFETs and its impact on devices reliability characterization
Self-heating effect in FinFETs and its impact on devices reliability characterization
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DOI：
10.1109/irps.2014.6860642
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发表时间：
2014-06
期刊：
影响因子：
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通讯作者：
S. E. Liu;J. Wang;Y. Lu;D. Huang;C. Huang;W. Hsieh;J. H. Lee;Y. Tsai;J. Shih;Y. Lee;K. Wu
中科院分区：
文献类型：
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作者：
S. E. Liu;J. Wang;Y. Lu;D. Huang;C. Huang;W. Hsieh;J. H. Lee;Y. Tsai;J. Shih;Y. Lee;K. Wu
在这项工作中，自热效应（SHE）对器件可靠性表征，如BTI，HCI和TDDB的影响进行了广泛的研究。详细研究了自热效应及其对器件级可靠性的影响，建立了版图相关的自热效应经验模型。由于NBTI表征过程中的恢复效应对自热敏感，提出了改变VT位移作为指标或采用μ s延迟测量系统来消除SHE影响的方法。在常见的HCI应力条件下，高漏极应力偏置通常会导致高功率或自加热，这可能会大大低估提取的寿命。建议应力条件Vg = 0.6~0.8Vd，以满足合理的工作功率和自热温升。类似地，由于SHE的存在，依赖于漏极偏置的TDDB特性也被低估，并且需要仔细校准以预测常见使用偏置下的寿命。
The impact of self-heating effect (SHE) on device reliability characterization, such as BTI, HCI, and TDDB, is extensively examined in this work. Self-heating effect and its impact on device level reliability mechanisms is carefully studied, and an empirical model for layout dependent SHE is established. Since the recovery effect during NBTI characterization is found sensitive to self-heating, either changing VT shift as index or adopting μs-delay measurement system is proposed to get rid of SHE influence. In common HCI stress condition, the high drain stress bias usually leads to high power or self-heating, which may dramatically under-estimate the lifetime extracted. The stress condition Vg = 0.6~0.8Vd is suggested to meet the reasonable operation power and self-heating induced temperature rising. Similarly, drain-bias dependent TDDB characteristics are also under-estimated due to the existence of SHE and need careful calibration to project the lifetime at common usage bias.