On the Band Alignment and Fermi Level Pinning at Compound Semiconductor Interfaces (invited)
On the Band Alignment and Fermi Level Pinning at Compound Semiconductor Interfaces (invited)
复制标题
化合物半导体界面的能带对准和费米能级钉扎(特邀)
DOI:
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发表时间:
2008
期刊:
影响因子:
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通讯作者:
H. Hasegawa
中科院分区:
文献类型:
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作者:
Yuichiro;Tanabe;吉永 耕二;鏡谷勇二;H. Hasegawa