An electro-optical and electromechanical effect in SbSI
An electro-optical and electromechanical effect in SbSI
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DOI：
10.1016/0022-3697(62)90008-2
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发表时间：
1962-03
影响因子：
4
通讯作者：
R. Kern
中科院分区：
文献类型：
--
作者：
R. Kern
在室温下，沿着锑硫碘化单晶（SbSI）的轴向施加5000 V/cm量级的电场，将光学吸收边从6300 Å移到更短波长约80 Å。在室温下，这种位移与低场场强的平方成正比，并随着温度的降低而减小。同时，在相同的外场下，晶体沿轴的延伸率为百分之零点几。当电场反向时，吸收边的位移和延伸率都没有变化。
An electric field of the order of 5000 V/cm applied along thec-axis of a single crystal of antimony-sulfo-iodide (SbSI) shifts the optical absorption edge from 6300 Å toshorterwavelengths by about 80 Å at room temperature. This shift is, at room temperature, to a first approximation proportional to the square of the field strength for low fields and decreases with decreasing temperature. At the same time, an elongation of the crystal along thec-axis of a few tenths of a per cent is observed for the same external field. Both the shift of the absorption edge and the elongation do not change sign when the field is reversed.