Defluorination-assisted nanotube-substitution reaction with ammonia gas for synthesis of nitrogen-doped single-walled carbon nanotubes

Defluorination-assisted nanotube-substitution reaction with ammonia gas for synthesis of nitrogen-doped single-walled carbon nanotubes
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DOI:
10.1016/j.carbon.2015.07.090
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发表时间:
2015-11
期刊:
影响因子:
10.9
通讯作者:
Koji Yokoyama;Y. Sato;Kazutaka Hirano;H. Ohta;K. Motomiya;K. Tohji
Koji Yokoyama;Y. Sato;Kazutaka Hirano;H. Ohta;K. Motomiya;K. Tohji
中科院分区:
材料科学2区
文献类型:
--
作者:
Koji Yokoyama;Y. Sato;Kazutaka Hirano;H. Ohta;K. Motomiya;K. Tohji

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通过将氟化单壁碳纳米管与氨气在300-600 °C的反应温度下反应来合成氮掺杂的单壁碳纳米管(N掺杂的SWCNT)。在400 °C下合成的N掺杂的SWCNT(N400° C掺杂的SWCNT)中,将氮原子以3.04原子%的浓度引入纳米管骨架中,吡啶-、吡咯-、石墨-和吡啶-N-氧化物型氮物质的浓度分别为1.22、1.36、0.34和0.08原子%,分别占总氮的40.1%、44.7%、11.2%和2.6%。N400° C掺杂的单壁碳纳米管薄膜的体积电阻率为2.3 ± 1.1 Ω · cm,表明它们可以归类为半导体。最后,发现N400° C掺杂的单壁碳纳米管的热电势在室温下在空气中为负,表明它们表现出n型导电。
Nitrogen-doped single-walled carbon nanotubes (N-doped SWCNTs) were synthesized by reacting fluorinated SWCNTs with ammonia gas at reaction temperatures of 300–600 °C. In the N-doped SWCNTs synthesized at 400 °C (N400°C-doped SWCNTs), nitrogen atoms were introduced into the nanotube framework at a concentration of 3.04 at.%, the concentrations of the pyridinic-, pyrrolic-, graphitic-, and pyridine-N-oxide-type nitrogen species were 1.22, 1.36, 0.34, and 0.08 at.%, respectively, and their percentages with respect to the total nitrogen species were 40.1, 44.7, 11.2, and 2.6%, respectively. The volume resistivity of films of the N400°C-doped SWCNTs was 2.3 ± 1.1 Ω · cm, indicating that they can be classified as semiconductors. Finally, it was found that the thermopower of the N400°C-doped SWCNTs was negative at room temperature in air, indicating that they exhibited n-type conduction.