Er3+ doped GYSGG crystal as a new laser material resistant to ionizing radiation
Er3+ doped GYSGG crystal as a new laser material resistant to ionizing radiation
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DOI:
10.1016/j.optcom.2013.03.048
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发表时间:
2013-08
影响因子:
2.4
通讯作者:
Jiakang Chen;D. Sun;Jianqiao Luo;Jing-zhong Xiao;R. Dou;Qingli Zhang
中科院分区:
文献类型:
--
作者:
Jiakang Chen;D. Sun;Jianqiao Luo;Jing-zhong Xiao;R. Dou;Qingli Zhang
We demonstrate a 968nm diode end-pumped Er:GYSGG (Gd1.17Y1.83Sc2Ga3O12) laser at 2.796μm operated in the pulse and continuous-wave (CW) modes. A maximum laser energy of 2.43mJ is obtained at a pulse width of 2ms, corresponding to a peak power of 1.25W and a slope efficiency of 7.2%. In the CW mode, the maximum output power is 348mW, corresponding to an optical–optical conversion efficiency of 9.2% and a slope efficiency of 10.1%. The M2factor is 1.94, and the beam divergence is 6.4mrad. Gamma irradiation at 100Mrad only slightly affects laser output performance. This result suggests that Er:GYSGG crystal is a potentially new mid-infrared radiation-resistant laser material that can be applied in space and ionizing radiation environment.