4H-silicon carbide thin junction based ultraviolet photodetectors
4H-silicon carbide thin junction based ultraviolet photodetectors
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DOI：
10.1016/j.tsf.2011.12.079
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发表时间：
2012-11-01
期刊：
影响因子：
2.1
通讯作者：
Planson, D.
中科院分区：
文献类型：
--
作者：
Biondo, S.;Lazar, M.;Planson, D.
本文研究了基于薄结的4 H-SiC紫外光探测器的光响应特性，并在黑暗和200 ~ 400 nm紫外光下进行了测试。模拟结果表明，在低注入层厚度下，载流子的捕获量有所增加。因此，在低能量（27千电子伏）的注入进行我们的样品。由于薄结结构，在280 nm的光电流被发现是四个数量级大于暗电流。我们的光电探测器的光谱响应度在280 nm处显示出峰值，其值为0.03 A/W。(C)2012年爱思唯尔B。V.保留所有权利。
This paper deals with the study of the photoresponse properties of 4H-SiC UV-photodetector devices based on a thin junction following their testing in darkness and under UV light over the 200 to 400 nm range. An increase of the carrier harvesting for low implanted layer thickness was shown by simulation. Thus, an implantation at low energy (27 keV) was carried out on our samples. Because of the thin junction architecture, the photocurrent at 280 nm was found to be four orders of magnitude larger than the dark current. A spectral responsivity of our photodetectors shows a peak at 280 nm with a value of 0.03 A/W. (C) 2012 Elsevier B. V. All rights reserved.