Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor
Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor
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DOI：
10.1063/1.2976309
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发表时间：
2008-08
影响因子：
4
通讯作者：
Won Jun Park;H. Shin;B. Ahn;G. Kim;S. M. Lee;K. Kim;Hyun Jae Kim
中科院分区：
文献类型：
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作者：
Won Jun Park;H. Shin;B. Ahn;G. Kim;S. M. Lee;K. Kim;Hyun Jae Kim
采用溶液法制备了Ga掺杂ZnO（GZO）薄膜晶体管（TFT），并根据Ga掺杂浓度[Ga scinZn（%）]的变化对GZO TFT进行了研究。在掺杂5.4%Ga的TFT中，场效应迁移率为1.63cm ~ 2 scinVs，漏电流开/关比为4.17×106。这一结果与GZO沟道层的结构特性和电学特性吻合得很好。据信，可以通过调节Ga掺杂浓度来获得TFT的最佳和期望的电学性质。
Ga-doped ZnO (GZO) thin film transistors (TFTs) were fabricated based on the solution-processed method and GZO TFTs were investigated according to the variation of the Ga doping concentration [Ga∕Zn (%)]. A field-effect mobility of 1.63cm2∕Vs and a drain current on/off ratio of 4.17×106 were observed in the 5.4 % Ga-doped TFT. This result shows good agreement with its structural properties and electrical properties of the GZO channel layer. It is believed that the optimal and desirable electrical properties of the TFTs can be obtained by adjusting the Ga doping concentration.