Role of density imbalance in an interacting bilayer hole system.

Role of density imbalance in an interacting bilayer hole system.
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密度不平衡在相互作用的双层空穴系统中的作用。

DOI:
10.1103/physrevlett.91.076802
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发表时间:
2002
影响因子:
8.6
通讯作者:
M. Shayegan
M. Shayegan
中科院分区:
物理与天体物理1区
文献类型:
--
作者:
E. Tutuc;S. Melinte;E. de Poortere;R. Pillarisetty;M. Shayegan

文献摘要

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在零层间隧穿极限下,研究了相互作用的GaAs空穴双层结构。当各层密度相等时,我们观察到总填充因子nu=1的位相相干双层量子霍尔态(QHS),在附近的填充处有一个可重入的绝缘相,这表明形成了钉扎的双层Wigner晶体。当我们将电荷从一层转移到另一层时,位相相干QHS变得更强,表现出对电荷不平衡的稳健性,但绝缘相消失,这表明它的稳定性需要两层的可公度性。
We study interacting GaAs hole bilayers in the limit of zero interlayer tunneling. When the layers have equal density, we observe a phase-coherent bilayer quantum Hall state (QHS) at a total filling factor nu=1, flanked by a reentrant insulating phase at nearby fillings which suggests the formation of a pinned, bilayer Wigner crystal. As we transfer charge from one layer to another, the phase-coherent QHS becomes stronger, evincing its robustness against charge imbalance, but the insulating phase disappears, suggesting that its stability requires the commensurability of the two layers.