Coexistence of universal and topological anomalous hall effects in metal CrO2 thin films in the dirty limit.
Coexistence of universal and topological anomalous hall effects in metal CrO2 thin films in the dirty limit.
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DOI：
10.1103/physrevlett.102.227201
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发表时间：
2009-06
影响因子：
8.6
通讯作者：
W. Branford;K. Yates;E. Barkhoudarov;J. Moore;K. Morrison;F. Magnus;Y. Miyoshi;P. Sousa;O. Conde;A. J. Silvestre;L. Cohen
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文献类型：
--
作者：
W. Branford;K. Yates;E. Barkhoudarov;J. Moore;K. Morrison;F. Magnus;Y. Miyoshi;P. Sousa;O. Conde;A. J. Silvestre;L. Cohen
当我们系统地增加结构无序性时，在一系列的CrO2薄膜中出现了异常霍尔和纵向电导率之间的标度指数为1.6，这是脏金属铁磁体中普遍霍尔机制的特征。二氧化钛的磁无序性随温度升高而增加，这驱动了一个单独的拓扑霍尔机制。我们发现这些项是由结构和磁缺陷种群离散控制的，它们的共存导致了指数1.6的明显背离，这表明通用项比以前认识到的更为普遍。
The scaling exponent of 1.6 between anomalous Hall and longitudinal conductivity, characteristic of the universal Hall mechanism in dirty-metal ferromagnets, emerges from a series of CrO2 films as we systematically increase structural disorder. Magnetic disorder in CrO2 increases with temperature and this drives a separate topological Hall mechanism. We find that these terms are controlled discretely by structural and magnetic defect populations, and their coexistence leads to apparent divergence from exponent 1.6, suggesting that the universal term is more prevalent than previously realized.