Effects of deep-level defects on carrier mobility in CdZnTe crystals
Effects of deep-level defects on carrier mobility in CdZnTe crystals
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DOI:
10.1016/j.nima.2014.08.040
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发表时间:
2014-12
影响因子:
1.4
通讯作者:
Lingyan Xu;W. Jie;Xu Fu;G. Zha;Tao Feng;Rongrong Guo;Tao Wang;Yadong Xu;Y. Zaman
中科院分区:
文献类型:
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作者:
Lingyan Xu;W. Jie;Xu Fu;G. Zha;Tao Feng;Rongrong Guo;Tao Wang;Yadong Xu;Y. Zaman
The capability to discriminate between neutrons and gamma rays (n/γ) by means of their pulse shapes is important for many users of liquid scintillator (LS) neutron detectors. To simulate then/γ discrimination capability of a neutron detector, we have developed a method to simulate the pulse signal generated by an incidentnor γ in the LS. Light pulses caused by ionization and excitation from incidentnor γ radiation are simulated by the Geant4 simulation package based on the geometry and materials of a prototype LS detector. The response to the incident light of the photomultiplier tube (PMT) and data acquisition (DAQ) circuit was obtained from a single photoelectron experiment. The final output signal from a detector was produced by convolving its light pulse with the response function of the PMT and DAQ. Two methods, the charge comparison method (CCM) and the pulse gradient method (PGM), were applied to discriminate the simulated signals. The simulation was validated by comparing its result to an experimental result from the prototype LS detector. Our method can be applied in the design of an LS detector, which has subsequently been optimizedn/γ discrimination. The method can also be helpful to analyze experimental data and evaluate the performance ofn/γ discrimination techniques.