New developments in the field of superhard coatings
New developments in the field of superhard coatings
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DOI：
10.1016/0257-8972(95)08212-3
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发表时间：
1995-09
影响因子：
5.4
通讯作者：
H. Ehrhardt
中科院分区：
文献类型：
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作者：
H. Ehrhardt
由于共价键合，硼、碳、氮和硅四种元素可以形成超硬材料（维氏硬度超过 4000），例如金刚石、高度四面体非晶碳（ta-C 和 ta-C:H）、结晶和非晶碳化硅、立方氮化硼以及可能的假设碳氮化物 β-C3N4。近年来，在金刚石化学气相沉积工具涂层以及ta-C、ta-C:H、a-SiC:H和C-BN的低温制备方面取得了快速进展。第二组超硬材料是通过将高能粒子（100 eV 量级）植入最初的无定形沉积物中而产生的。这导致靠近表面的高应力值和高热峰值温度。根据网络中原子的迁移率和淬火温度（约 1014K s−1），材料可能形成纳米微晶 (c-BN) 或保持无定形 (ta-C)，并具有 sp3 和 sp2 键合簇。然而，已经通过在室温下溅射 h-BN 和氩离子镀来生产含有超过 93% c-BN 的涂层，而不使用离子束布置。报道了制备和鉴定 β-C3N4 的各种尝试。对于这种材料，预计其硬度高于金刚石。
As a result of covalent bonding, the four elements boron, carbon, nitrogen and silicon can form superhard materials (Vickers hardness of more than 4000), such as diamond, highly tetrahedral amorphous carbon (ta-C and ta-C:H), crystalline and amorphous silicon carbide, cubic boron nitride and, possibly, the hypothetical carbon nitride β-C3N4. Lately, fast progress has been achieved in chemical vapour deposition of diamond for coating of tools, as well as in the low temperature preparation of ta-C, ta-C:H, a-SiC:H and C-BN. This second group of superhard materials is produced by subplantation of energetic particles (of the order of 100 eV) into the initially amorphous deposits. This leads to high stress values and high thermal spike temperatures close to the surface. Depending on the mobilities of the atoms in the network and on the quenching temperature (about 1014K s−1), the material may form nanocrystallites (c-BN) or remain amorphous (ta-C), with clustering of sp3and sp2bondings. However, coatings with more than 93% c-BN have been produced by sputtering of h-BN and argon ion plating at room temperature, without using an ion beam arrangement. Various attempts to prepare and identify β-C3N4are reported. For this material, a higher hardness is predicted than that for diamon.