Characteristics of lithium niobate based capacitors and transistors
Characteristics of lithium niobate based capacitors and transistors
复制标题
铌酸锂基电容器和晶体管的特性
DOI：
10.1080/10584589308216711
复制
发表时间：
1993
期刊：
影响因子：
--
通讯作者：
T. Rabson
中科院分区：
文献类型：
--
作者：
Eric B. Smith;He Lin;T. A. Rost;T. Rabson
摘要：测量了在硅和铂上生长的铌酸锂薄膜（<1000 A）电容器器件和以铌酸锂为栅极材料的厚膜金属-铁电-半导体场效应晶体管（mfset）的电学性能。硅上薄膜的介电常数高达27，铂上薄膜的介电常数高达49。mfset结构表现出良好的场效应晶体管性能，并表现出与铁电门脉冲开关相一致的通道电流调制。
Abstract The electrical properties of thin film (<1000 A) capacitor devices of lithium niobate grown on silicon and platinum and of thicker film metal-ferroelectric-semiconductor field effect transistors (MFSFET) with lithium niobate as the gate material were measured. Dielectric constants of the thin films on silicon were as high as 27, while those for films on platinum were as high as 49. The MFSFET structures showed good FET properties, and demonstrated a channel current modulation consistent with switching of the ferroelectric gate by pulsing.