Detection of acetone vapours using solution-processed tin oxide thin-film transistors
Detection of acetone vapours using solution-processed tin oxide thin-film transistors
复制标题
DOI：
10.1557/s43580-023-00494-5
复制
发表时间：
2023-01
期刊：
影响因子：
0.8
通讯作者：
Lauren R. Miller;Robert J. Borthwick;Paloma L. dos Santos;M. U. Chaudhry
中科院分区：
文献类型：
--
作者：
Lauren R. Miller;Robert J. Borthwick;Paloma L. dos Santos;M. U. Chaudhry
人体呼吸中异常浓度的挥发性有机化合物(VOCs)可作为疾病特异性生物标志物，用于非侵入性诊断医疗条件，如丙酮对糖尿病的诊断。作为概念验证研究的一部分，溶液处理的底栅上接触金属氧化物薄膜晶体管(TFT)被用于检测丙酮蒸气。探讨了提高退火温度(T)和沟道长度(L)对电学和传感性能的影响。由于丙酮与半导体表面吸附的氧物种发生氧化还原反应，导致自由电子被释放回导带，导致漏电流(I_DS)随曝光时间的增加而增加。响应度(R)在负偏压(V_gs<；0)时最大。当L=50μm时，温度为450℃的薄膜晶体管的峰值R是温度为350℃的薄膜晶体管的3倍，V_gs分别为−37.5V和−33V。图形摘要
Abnormal concentrations of volatile organic compounds (VOCs) in human breathe can be used as disease-specific biomarkers for the non-invasive diagnosis of medical conditions, such as acetone for diabetes. Solution-processed bottom gate top contact metal oxide thin-film transistors (TFTs) are used to detect acetone vapours, as part of a proof-of-concept study. The effect of increasing annealing temperature ( T ) and channel length ( L ) on electrical and sensing performance are explored. Drain current ( I _ds) increases following exposure as acetone undergoes a redox reaction with the adsorbed oxygen species on the semiconductor surface, which results in free electrons being released back into the conduction band. Responsivity ( R ) is maximized at negative bias ( V _gs < 0). For L = 50 μm, the peak R of the TFT annealed at 450 °C is three times greater than that of the TFT annealed at 350 °C, with V _gs = − 37.5 V and − 33 V, respectively. Graphical abstract