Polarization control of the nonlinear emission of semiconductor microcavities.
Polarization control of the nonlinear emission of semiconductor microcavities.
复制标题
半导体微腔非线性发射的偏振控制。
DOI：
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发表时间：
2002
影响因子：
8.6
通讯作者：
R. André
中科院分区：
文献类型：
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作者：
M. Martín;G. Aichmayr;L. Viña;R. André
通过改变激子-腔失谐来控制半导体微腔中非线性发射的圆极化度（weerstrass p）。极化子向K近似为0的类腔态弛豫是由末态受激散射控制的。选择发射的螺旋度是因为K约为0时+/-1自旋能级的简并度提高。在脉冲激发后的短时间内，由于受激散射到最低能量的自旋能级（正/负失谐时为+1/-1自旋），weerstrass p达到非常大的值，可以是正的，也可以是负的。
The degree of circular polarization ( Weierstrass p ) of the nonlinear emission in semiconductor microcavities is controlled by changing the exciton-cavity detuning. The polariton relaxation towards K approximately 0 cavitylike states is governed by final-state stimulated scattering. The helicity of the emission is selected due to the lifting of the degeneracy of the +/-1 spin levels at K approximately 0. At short times after a pulsed excitation Weierstrass p reaches very large values, either positive or negative, as a result of stimulated scattering to the spin level of lowest energy (+1/-1 spin for positive/negative detuning).