Modified reflection in birefringent layers of core-shell semiconductor nanowires
Modified reflection in birefringent layers of core-shell semiconductor nanowires
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DOI：
10.1088/0268-1242/25/2/024008
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发表时间：
2010-02-01
影响因子：
1.9
通讯作者：
Rivas, J. Gomez
中科院分区：
文献类型：
--
作者：
Diedenhofen, S. L.;Rivas, J. Gomez
采用金属-有机气相外延的方法在GaP衬底上生长出双折射的GaP纳米线层。我们通过在纳米线周围添加12 nm的SiO2来改变生长层的反射。利用麦克斯韦-加内特有效介质理论计算了壳体对双折射纳米线层有效折射率的影响。由于壳层反射的巨大变化使纳米线层成为传感应用的有前途的材料。
Birefringent layers of GaP nanowires are grown by metal-organic vapor phase epitaxy on top of a GaP substrate. We modified the reflection of the as-grown layer by adding a shell of 12 nm of SiO2 around the nanowires. The effect of the shell on the effective refractive indices of the birefringent nanowire layer was calculated using Maxwell-Garnett effective medium theory for coated cylinders. The large change of the reflection due to the shell renders nanowire layers a promising material for sensing applications.