Comment on "Critical behavior of the zero-temperature conductivity in compensated silicon, Si:(P,B)"
Comment on "Critical behavior of the zero-temperature conductivity in compensated silicon, Si:(P,B)"
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DOI：
10.1103/physrevb.40.4194
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发表时间：
1989-08
期刊：
影响因子：
--
通讯作者：
Moebius
中科院分区：
文献类型：
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作者：
Moebius
在前面的评论中，M{umlt o}bius重新评估了我们在金属-绝缘体转变附近的Si:（P，B）样品上的低温电导率数据。Rev. B 37,8257(1988))，并质疑我们的零温度外推的有效性。他将我们拟合数据的偏差解释为支持过渡模型(a . M . {umlt o}bius和同事，J. Phys；C 18, 3337 (1985)；18, 4639(1985))替代我们使用的标度理论。我们同意，拟合不能准确地描述接近过渡的数据。然而，我们注意到偏差可能是由样本的不均匀性引起的，在这种情况下，两种模型之间不可能有明确的区分。
In the preceding Comment, M{umlt o}bius reevaluates our low-temperature electrical-conductivity data on Si:(P,B) samples near the metal-insulator transition (Phys. Rev. B 37, 8257 (1988)) and questions the validity of our zero-temperature extrapolation. He interprets the deviations of the data from our fits as supporting a model of the transition (A. M{umlt o}bius and co-workers, J. Phys. C 18, 3337 (1985); 18, 4639 (1985)) alternative to the scaling theory which we used. We agree that the fits do not accurately describe the data close to the transition. However, we note that the deviations may arise from sample inhomogeneities, in which case no clear distinction between the two models is possible.