Thallium bromide and thallium bromoiodide gamma ray spectrometer development

Thallium bromide and thallium bromoiodide gamma ray spectrometer development
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溴化铊和溴碘化铊伽马射线能谱仪的研制

DOI:
10.1109/nssmic.2009.5402204
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发表时间:
2009
期刊:
2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC)
影响因子:
--
通讯作者:
K. Shah
K. Shah
中科院分区:
--
文献类型:
--
作者:
H. Kim;L. Cirignano;A. Churilov;G. Ciampi;W. Higgins;F. Olschner;K. Shah

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溴化铊(TlBr)由于其高密度、高原子序数和宽禁带,作为一种用于室温伽马射线能谱分析的材料而受到关注。此外,其立方晶体结构和相对较低的熔点有利于通过熔体技术进行晶体生长。材料提纯、晶体生长和器件加工方面的最新进展使得电子的迁移率 - 寿命乘积达到10⁻³平方厘米/伏左右的中间值,从而能够制造出厚度达15毫米的可用探测器。尽管溴化铊器件的性能很有前景,但室温下探测器的长期稳定性是一个问题。我们正在研究三元化合物溴碘化铊(TlBrₓI₁₋ₓ)的各种成分,以改变禁带宽度,并确定添加碘化铊(TlI)对探测器性能的影响。在本文中,我们报告了我们在溴化铊伽马射线能谱仪开发方面的最新进展以及溴碘化铊(TlBrₓI₁₋ₓ)器件的初步结果。将展示厚度达15毫米的溴化铊探测器的结果,包括深度校正后的脉冲高度谱。还将讨论探测器的稳定性。这项工作得到了美国国内核探测办公室(DNDO)的支持。
Thallium bromide (TlBr) is of interest as a material for room temperature gamma ray spectroscopy due to its high density, high Z and wide bandgap. In addition, its cubic crystal structure and relatively low melting point facilitate crystal growth by melt techniques. Recent advances in material purification, crystal growth and device processing have led to mobility-lifetime products of electrons in the mid 10−3 cm2/V range enabling working detectors up to 15-mm thick to be fabricated. Although performance of TlBr devices is promising, long term detector stability at room temperature is an issue. We are investigating various compositions of the ternary compound, thallium bromoiodide (TlBrxI1−x) to vary the band gap and determine the effect of added thallium iodide (TlI) on detector performance. In this paper we report on our recent progress in TlBr gamma-ray spectrometer development as well as our initial results from TlBrxI1−x devices. Results from TlBr detectors up to 15-mm thick will be presented including depth corrected pulse height spectra. Detector stability will also be discussed. This work is being supported by the Domestic Nuclear Detection Office (DNDO).
DOI: --
发表时间: 2006
期刊: Nuclear Instruments & Methods in Physics Research Section A 568
影响因子: --
作者:
田中浩基;山岸秀志;その他4名;T.Onodera
通讯作者: T.Onodera