A perspective on the doping of transition metal dichalcogenides for ultra-scaled transistors: Challenges and opportunities
A perspective on the doping of transition metal dichalcogenides for ultra-scaled transistors: Challenges and opportunities
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DOI：
10.1063/5.0133064
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发表时间：
2023-04
影响因子：
4
通讯作者：
Rehan Younas;Guanyu Zhou;C. Hinkle
中科院分区：
文献类型：
--
作者：
Rehan Younas;Guanyu Zhou;C. Hinkle
为了支持对更快、节能计算的不断增长的需求，需要对晶体管进行更积极的缩放。二维（2D）过渡金属二硫属化物（TMD）具有超薄体、优异的静电栅极控制以及不存在表面悬挂键，允许沟道区的极端缩放而不损害迁移率。新的器件几何形状，例如具有多个平行通道用于载流子流动的堆叠纳米片，可以促进更高的驱动电流以实现超快速开关，并且TMD是下一代前端场效应晶体管（FET）的理想候选者。由于TMD能够在低温下生长并且较少考虑通过货车德瓦尔斯（vdW）外延的晶格匹配，因此TMD对于单片3D（M3D）集成后段工艺FET也是有希望的。为了实现具有上级性能的TMD FET，必须解决两个重要的挑战：（1）需要具有小且可靠的阈值电压的互补n型和p型FET，以降低每个逻辑操作的动态和静态功耗，以及（2）必须显著降低接触电阻。我们在这里提出了各种各样的方法正在调查提供可扩展的，稳定的，可控的掺杂的潜在优势和弱点。我们认为，在所有可用的掺杂方法中，替代掺杂为基于TMD的晶体管提供了最终解决方案。
To support the ever-growing demand for faster, energy-efficient computation, more aggressive scaling of the transistor is required. Two-dimensional (2D) transition metal dichalcogenides (TMDs), with their ultra-thin body, excellent electrostatic gate control, and absence of surface dangling bonds, allow for extreme scaling of the channel region without compromising the mobility. New device geometries, such as stacked nanosheets with multiple parallel channels for carrier flow, can facilitate higher drive currents to enable ultra-fast switches, and TMDs are an ideal candidate for that type of next generation front-end-of-line field effect transistor (FET). TMDs are also promising for monolithic 3D (M3D) integrated back-end-of-line FETs due to their ability to be grown at low temperature and with less regard to lattice matching through van der Waals (vdW) epitaxy. To achieve TMD FETs with superior performance, two important challenges must be addressed: (1) complementary n- and p-type FETs with small and reliable threshold voltages are required for the reduction of dynamic and static power consumption per logic operation, and (2) contact resistance must be reduced significantly. We present here the underlying strengths and weaknesses of the wide variety of methods under investigation to provide scalable, stable, and controllable doping. It is our Perspective that of all the available doping methods, substitutional doping offers the ultimate solution for TMD-based transistors.