Coulomb-driven single defect engineering for scalable qubits and spin sensors in diamond
Coulomb-driven single defect engineering for scalable qubits and spin sensors in diamond
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DOI：
10.1038/s41467-019-12556-0
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发表时间：
2019-10-31
影响因子：
16.6
通讯作者：
Pezzagna, Sebastien
中科院分区：
文献类型：
--
作者：
Luehmann, Tobias;John, Roger;Pezzagna, Sebastien
基于钻石色心的量子比特成为固态量子信息处理和传感的重要系统。但是量子比特的确定性创建及其环境的控制仍然是关键问题，阻碍了室温量子计算机的发展。我们报告的NV中心的75%（一个十倍的增强）的电荷辅助缺陷工程的高创建产量，连同他们的自旋相干性的改善。该方法强烈地有利于相对于本征金刚石的NV中心的形成和负电荷状态，同时它阻碍了竞争和扰动缺陷（例如双空位或NVH复合物）的形成。我们的证据光谱的电荷状态调谐的重结晶诱导的空缺从V-0到V-，这个库仑驱动的工程的关键要素。该方法的一般性证明使用几个捐助者（磷，氧和硫），并将其应用到其他中心（SnV和MgV）在金刚石。
Qubits based on colour centres in diamond became a prominent system for solid-state quantum information processing and sensing. But the deterministic creation of qubits and the control of their environment are still critical issues, preventing the development of a room-temperature quantum computer. We report on the high creation yield of NV centres of 75% (a tenfold enhancement) by charge-assisted defect engineering, together with an improvement of their spin coherence. The method strongly favours the formation and negative charge state of the NV centres with respect to intrinsic diamond, while it hinders the formation of competing and perturbing defects such as di-vacancies or NVH complexes. We evidence spectrally the charge state tuning of the implantation-induced vacancies from V-0 to V-, key element of this Coulomb-driven engineering. The generality of the method is demonstrated using several donors (phosphorous, oxygen and sulphur) and applying it to other centres (SnV and MgV) in diamond.