Magnetoelectric effect in free-standing multiferroic thin film
Magnetoelectric effect in free-standing multiferroic thin film
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DOI：
10.1016/j.jallcom.2019.02.135
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发表时间：
2019-05
影响因子：
6.2
通讯作者：
Sridevi Meenachisundaram;H. Mori;T. Kawaguchi;P. Gangopadhyay;N. Sakamoto;K. Shinozaki;C. Muthamizhchelvan;S. Ponnusamy;Hisao Suzuki;N. Wakiya
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文献类型：
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作者：
Sridevi Meenachisundaram;H. Mori;T. Kawaguchi;P. Gangopadhyay;N. Sakamoto;K. Shinozaki;C. Muthamizhchelvan;S. Ponnusamy;Hisao Suzuki;N. Wakiya
以单分散聚甲基丙烯酸甲酯（PMMA）颗粒为模板，在Si（100）衬底上制备了二维紧密堆积的半球形CoFe2O4(CFO)/Pb(Zr0.52Ti0.48O3)(PZT)/LaNiO3(LNO)/NiO薄膜。引入LNO和NiO层分别用于底部电极和种子的结晶。由于这种半球形薄膜仅在半球的“底部”与衬底相连，因此这种薄膜具有中空结构。因此我们称这种结构为“独立式”薄膜。在这项工作中，我们还在Si（100）衬底上制备了平面CFO/PZT/LNO/NiO薄膜，而没有使用PMMA模板进行比较。在这项工作中，我们研究了施加垂直外磁场对铁电性能的影响。结果表明，外加磁场可降低平面薄膜和独立薄膜的剩余极化（Pr）。在独立薄膜上印刷的减少程度大约是平面薄膜的4倍。这表明在独立薄膜中实现了大的多铁性（铁磁和铁电的相互作用）。
We prepared two-dimensional close-packed hemispherical CoFe2O4(CFO)/Pb(Zr0.52Ti0.48O3)(PZT)/LaNiO3(LNO)/NiO thin film on Si(100) substrate using a template made of monodispersed polymethyl methacrylate (PMMA) particles. LNO and NiO layers are introduced for the bottom electrode and seed to crystallize, respectively. Since this hemispherical thin film is connected with the substrate only at the “foot” of the hemisphere, this thin film has a hollow structure. Therefore we call this structure as “free-standing” thin film. In this work, we also prepared planar CFO/PZT/LNO/NiO thin film on Si(100) substrate without using the PMMA template for comparison. In this work, we examined the effect of applying a vertical external magnetic field on the ferroelectric property. It was found that applying an external magnetic field decreases remanent polarization (Pr) for both planar and free-standing thin film. The degree of decrease ofPrin the free-standing thin film is about four times larger than that in the planar thin film. This indicates that large multiferroic property (interaction between ferromagnetic and ferroelectric) is realized in the free-standing thin film.