Effect of GaAs interfacial layer on the performance of high bandgap tunnel junctions for multijunction solar cells
Effect of GaAs interfacial layer on the performance of high bandgap tunnel junctions for multijunction solar cells
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DOI：
10.1063/1.4819917
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发表时间：
2013-09
影响因子：
4
通讯作者：
J. Samberg;C. Carlin;G. Bradshaw;P. Colter;Jeffrey L. Harmon;J. Allen;J. Hauser;S. Bedair
中科院分区：
文献类型：
--
作者：
J. Samberg;C. Carlin;G. Bradshaw;P. Colter;Jeffrey L. Harmon;J. Allen;J. Hauser;S. Bedair
研究了异质结界面对高带隙InxGa1−xP:Te/Al0.6Ga0.4As:C隧道结（TJs）性能的影响。在结界面处插入30 A的GaAs:Te导致峰值电流为1000 A/cm2, 30 A/cm2 （2000×浓度）的电压降为~ 3 mV。这种砷化镓界面层的存在也改善了晶圆片上的均匀性。模拟结果与实验数据一致，并用于解释观察到的TJ性能增强。这种结构可以在多结太阳能电池中使用，以最小的电压降扩展可用太阳能集中的范围。
The effect of the heterojunction interface on the performance of high bandgap InxGa1−xP:Te/Al0.6Ga0.4As:C tunnel junctions (TJs) was investigated. The insertion of 30 A of GaAs:Te at the junction interface resulted in a peak current of 1000 A/cm2 and a voltage drop of ∼3 mV for 30 A/cm2 (2000× concentration). The presence of this GaAs interfacial layer also improved the uniformity across the wafer. Modeling results are consistent with experimental data and were used to explain the observed enhancement in TJ performance. This architecture could be used within multijunction solar cells to extend the range of usable solar concentration with minimal voltage drop.