Design of the stressed Ge:Ga far-infrared array for SIRTF
Design of the stressed Ge:Ga far-infrared array for SIRTF
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SIRTF应力Ge:Ga远红外阵列设计
DOI：
10.1117/12.317318
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
G. Rieke
中科院分区：
文献类型：
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作者：
R. Schnurr;C. L. Thompson;James T. Davis;J. Beeman;J. Cadien;E. Young;E. Haller;G. Rieke
应力Ge：Ga是目前最适合在115至200微米范围内进行极低背景操作的探测器类型。尽管如此，已经需要大量的进展，以开发强调Ge：Ga探测器，在SIRTF的背景限制工作。SIRTF器件的暗电流和读噪声都得到了显著改善。该设计还考虑到了空间飞行的要求，如必须使用最小的低温功率耗散热退火的焦平面，并希望任何故障不会传播通过整个焦平面。SIRTF 2 X 20像素焦平面的暗电流约为200 e/s，读取噪声为100 e rms，响应度> 7 A/W。因此，即使在天空中最黑暗的部分，它也会在不到4秒的积分时间内达到背景极限。
Stressed Ge:Ga is currently the most suitable detector type for very low background operation in the 115 to 200 micrometers range. Nonetheless, substantial advances have been required to develop stressed Ge:Ga detectors that work at the background limit in SIRTF. Both dark current and read noise have been improved significantly for the SIRTF devices. The design also takes account of space flight requirements such as the necessity to anneal the focal plane thermally using a minimum of cryogenic power dissipation, and the desire that any failures not propagate through an entire focal plane. The SIRTF 2 X 20 pixel focal plane will have dark current of about 200 e/s, read noise of 100 e rms, and responsivity > 7 A/W. As a result, even in the darkest parts of the sky, it will reach the background limit in less than 4 seconds of integration.