Current Induced Non-Volatile Resistive Switching Effect in Silicon Devices with Large Magnetoresistance
Current Induced Non-Volatile Resistive Switching Effect in Silicon Devices with Large Magnetoresistance
复制标题
大磁阻硅器件中的电流感应非易失性电阻开关效应
DOI：
10.1088/0256-307x/31/7/077201
复制
发表时间：
2014
影响因子：
3.5
通讯作者：
XIONG Cheng-Yue
中科院分区：
文献类型：
--
作者：
WANG Ji-Min;ZHANG Xiao-Zhong;PIAO Hong-Guang;LUO Zhao-Chu;XIONG Cheng-Yue
研制了一种Si-SiO_2-Mg结构的非易失性阻变开关器件，在大电流激励下，在一定的转换电压下，器件的通断比约为4.5。观察到，电阻转变电压Vt随着时间的推移而变化。
We develop a non-volatile resistive switching device in a Si—SiO2—Mg structure with an on/of ratio of about 4.5 at a certain transition voltage after being stimulated by a large current. It is observed that the resistance transition voltage Vt shifts repr