Resistance Strip Magnetic Electron Multiplier

Resistance Strip Magnetic Electron Multiplier
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电阻带磁电子倍增器

DOI:
10.1063/1.1717528
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发表时间:
1961
影响因子:
1.6
通讯作者:
W. Wiley
W. Wiley
中科院分区:
工程技术4区
文献类型:
--
作者:
G. W. Goodrich;W. Wiley

文献摘要

被引文献

相似文献

描述了一种磁电子倍增器,其利用半导体材料带而不是常规的多元件倍增器电极结构。特别适用于可拆卸的真空系统中使用,它放大和检测的电子,从轰击的阴极离子,中性分子,光子等增益超过107,和暗电流低于0.1电子每秒参考阴极已获得。讨论了增加交叉场门以快速将输出光束引导到几个输出阳极中的任何一个。理论的操作和实验测量结果的报告。
A magnetic electron multiplier which utilizes a strip of semiconductor material rather than a conventional multielement dynode structure is described. Especially suitable for use in demountable vacuum systems, it amplifies and detects the electrons which result from bombardment of the cathode with ions, neutral molecules, photons, etc. Gains over 107, and dark currents lower than 0.1 electron per second referred to the cathode have been obtained. The addition of crossed field gates to rapidly direct the output beam to any one of several output anodes is discussed. Theory of operation and results of experimental measurements are reported.