Fan-in analysis of a leaky integrator circuit using charge transfer synapses

Fan-in analysis of a leaky integrator circuit using charge transfer synapses
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使用电荷转移突触对泄漏积分电路进行扇入分析

DOI:
10.1016/j.neucom.2018.06.065
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发表时间:
2018
期刊:
影响因子:
6
通讯作者:
Dowrick T
Dowrick T
中科院分区:
计算机科学2区
文献类型:
--
作者:
Dowrick T

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结果表明,一个简单的漏积分器(LI)电路工作在动态模式下,可以允许加权突触输出的空间和时间的总和。该电路采用了电流镜配置来求和从电荷转移突触释放的电荷包,并且在亚阈值下操作的n沟道MOSFET用于实现泄漏能力,其设置突触后响应的衰减时间。本文的重点是开发一个扇入分析模型,并根据采用AMS0.35 µm混合信号CMOS技术制造的原型芯片获得的仿真和实验结果验证该模型。我们表明,该模型预测扇入的理论极限,与加权突触输入的突触后反应的幅度和捕获的瞬时响应的LI刺激时,与尖峰输入。
It is shown that a simple leaky integrator (LI) circuit operating in a dynamic mode can allow spatial and temporal summation of weighted synaptic outputs. The circuit incorporates a current mirror configuration to sum charge packets released from charge transfer synapses and an n-channel MOSFET, operating in subthreshold, serves to implement a leakage capability, which sets the decay time for the postsynaptic response. The focus of the paper is to develop an analytical model for fan-in and validate the model against simulation and experimental results obtained from a prototype chip fabricated in the AMS 0.35 µm mixed signal CMOS technology. We show that the model predicts the theoretical limit on fan-in, relates the magnitude of the postsynaptic response to weighted synaptic inputs and captures the transient response of the LI when stimulated with spike inputs.
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DOI: 10.1523/jneurosci.08-12-04667.1988
发表时间: 1988
影响因子: --
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DOI: --
发表时间: 2010
期刊: Neural Networks
影响因子: 7.8
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