Simulation, Fabrication and Characterization of 6500V 4H-SiC JBS Diode
Simulation, Fabrication and Characterization of 6500V 4H-SiC JBS Diode
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DOI：
10.4028/www.scientific.net/amr.846-847.737
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发表时间：
2013-11
期刊：
影响因子：
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通讯作者：
Run-Hua Huang;Y. Tao;Gang Chen;S. Bai;Rui Li;Yun Li
中科院分区：
文献类型：
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作者：
Run-Hua Huang;Y. Tao;Gang Chen;S. Bai;Rui Li;Yun Li
在带有外延层的4 H-SiC基片上成功地制备了击穿电压大于6.5kV的4 H-SiC结束二极管。本文报道了4 H-SiC结垒二极管的模拟、制备和电特性。漂移层厚度和掺杂分别为55 μm和9×1014 cm ~ 3。制作了60个浮动保护环边缘作为终端。通态电压在JF = 7A时为4V。
4H-SiC JBS diode with breakdown voltage higher than 6.5 kV has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper, the simulation, the fabrication, and the electrical characteristics of 4H-SiC JBS diode were reported. The drift layer thickness and doping are 55 μm and 9×1014 cm3 respectively. 60 floating guard rings edge were fabricated as termination. The on-state voltage was 4 V at JF = 7A.