Visualizing the Electron Wind Force in the Elastic Regime

Visualizing the Electron Wind Force in the Elastic Regime
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DOI:
10.1021/acs.nanolett.1c02641
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发表时间:
2021-12-22
期刊:
影响因子:
10.8
通讯作者:
Regan, B. C.
Regan, B. C.
中科院分区:
材料科学1区
文献类型:
--
作者:
Mecklenburg, Matthew;Zutter, Brian T.;Regan, B. C.

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随着向更高组件密度的持续缩放,集成电路(IC)包含更大长度的纳米线,其容易由于电迁移而失效。以前,已经观察到由“电子风”驱动的塑性电迁移,但没有观察到对风力本身的弹性响应。在这里,我们描述映射,通过电子能量损失谱,密度光刻定义的铝纳米线具有足够的精度,以确定其温度和内部压力。10(8)A/cm(2)的电流密度产生焦耳加热、逆风张力和顺风压缩。令人惊讶的是,在电流密度仍然很高的电线内部,压力恢复到其环境值。这种空间上的差异指向了经典的“风力”模型所不能捕捉到的物理现象,以及优化抗电迁移IC设计的新机会。
With continued scaling toward higher component densities, integrated circuits (ICs) contain ever greater lengths of nanowire that are vulnerable to failure via electromigration. Previously, plastic electromigration driven by the "electron wind" has been observed, but not the elastic response to the wind force itself. Here we describe mapping, via electron energy-loss spectroscopy, the density of a lithographically defined aluminum nanowire with sufficient precision to determine both its temperature and its internal pressure. An electrical current density of 10(8) A/cm(2) produces Joule heating, tension upwind, and compression downwind. Surprisingly, the pressure returns to its ambient value well inside the wire, where the current density is still high. This spatial discrepancy points to physics that are not captured by a classical "wind force" model and to new opportunities for optimizing electromigration-resistant IC design.