Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors.
Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors.
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DOI：
10.1186/1556-276x-9-1
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发表时间：
2014-01-01
影响因子：
--
通讯作者：
Yang CF
中科院分区：
文献类型：
--
作者：
Liou JC;Diao CC;Lin JJ;Chen YL;Yang CF
在这项研究中，钼电极薄膜的沉积通过两个步骤的过程中，和高纯度铜铟硒基粉末（CuInSe 2，CIS）由Nanowin技术有限公司通过水热工艺制备。从CIS前体的X-射线图案，主要的晶相是CIS，和几乎检测不到的CuSe相观察。由于CIS粉末聚集成微米级颗粒并且平均粒度为约3 μ m至8 μm，因此将CIS粉末研磨成纳米级颗粒，然后将6重量%的CIS粉末研磨成纳米级颗粒。将CIS颗粒分散在异丙醇中以获得用于喷涂方法的溶液。然后，将0.1ml CIS溶液喷涂到20 mm × 10 mm的Mo/玻璃基片上，在硒化炉中对纳米级CIS溶液进行不同参数下的热处理。退火温度设定为550°C，退火时间从5分钟变为30分钟，炉中不添加额外的Se含量。研究了退火时间对CIS吸收层的致密化、晶化、电阻率（ρ）、霍尔迁移率（μ）和载流子浓度的影响。
In this study, the Mo-electrode thin films were deposited by a two-stepped process, and the high-purity copper indium selenide-based powder (CuInSe2, CIS) was fabricated by hydrothermal process by Nanowin Technology Co. Ltd. From the X-ray pattern of the CIS precursor, the mainly crystalline phase was CIS, and the almost undetectable CuSe phase was observed. Because the CIS powder was aggregated into micro-scale particles and the average particle sizes were approximately 3 to 8 μm, the CIS power was ground into nano-scale particles, then the 6 wt.% CIS particles were dispersed into isopropyl alcohol to get the solution for spray coating method. Then, 0.1 ml CIS solution was sprayed on the 20 mm × 10 mm Mo/glass substrates, and the heat treatment for the nano-scale CIS solution under various parameters was carried out in a selenization furnace. The annealing temperature was set at 550°C, and the annealing time was changed from 5 to 30 min, without extra Se content was added in the furnace. The influences of annealing time on the densification, crystallization, resistivity (ρ), hall mobility (μ), and carrier concentration of the CIS absorber layers were well investigated in this study.