Fine and Large Coulomb Diamonds in a Silicon Quantum Dot
Fine and Large Coulomb Diamonds in a Silicon Quantum Dot
复制标题
硅量子点中的细大库仑钻石
DOI：
10.1143/jjap.48.06ff15
复制
发表时间：
2009
影响因子：
1.5
通讯作者：
Y. Arakawa
中科院分区：
文献类型：
--
作者：
T. Kodera;T. Ferrus;T. Nakaoka;G. Podd;Michael Tanner;D. Williams;Y. Arakawa
实验研究了由高掺杂n型绝缘体上硅晶片制备的硅量子点的输运性质。使用低温互补金属氧化物半导体（LTCMOS）放大器在4.2 K液氦中进行低噪声电气测量。观察到两个系列的库仑峰：长周期振荡和精细结构，它们都表现出明显的源漏电压依赖性。我们还观察到两个系列具有不同周期性的库仑钻石。所得到的实验结果很好地再现了主方程分析使用的双量子点并联耦合的模型。
We experimentally study the transport properties of silicon quantum dots (QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal–oxide–semiconductor (LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and both of them show clear source drain voltage dependence. We also observe two series of Coulomb diamonds having different periodicity. The obtained experimental results are well reproduced by a master equation analysis using a model of double QDs coupled in parallel.
影响因子：
56.9
作者：
Petta, JR;Johnson, AC;Gossard, AC
通讯作者：
Gossard, AC