19% efficiency heterojunction solar cells on Cz wafers from non-blended Upgraded Metallurgical Silicon
19% efficiency heterojunction solar cells on Cz wafers from non-blended Upgraded Metallurgical Silicon
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DOI：
10.1109/pvsc.2012.6318266
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发表时间：
2012-06
期刊：
影响因子：
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通讯作者：
R. Einhaus;J. Kraiem;J. Degoulange;O. Nichiporuk;Maxime Forster;P. Papet;Y. Andrault;D. Grosset-Bourbange;F. Cocco
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文献类型：
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作者：
R. Einhaus;J. Kraiem;J. Degoulange;O. Nichiporuk;Maxime Forster;P. Papet;Y. Andrault;D. Grosset-Bourbange;F. Cocco
高度纯化的n型UMG（“升级冶金”）硅是具有用于高效率低成本太阳能电池的强大潜力的材料。与p型硅相比，n型硅通常不太容易受到由于残留金属杂质引起的寿命退化或由于硼-氧络合物引起的光诱导退化的影响。本工作用PHOTOSIL工艺从100%高纯UMG硅中生长出15公斤6英寸单晶直拉硅锭。在该原料中，发现通过GDMS测量的硼和磷浓度分别为0.3ppmw和2 ppmw。所得锭是n型的、完全单晶的c1，并且具有0.2至1欧姆·厘米的电阻率范围。其他杂质，尤其是金属，采用所用分析技术（GDMS、ICP-OES）无法检出。将锭切割成180微米厚的125×125 mm 2伪正方形晶片。第一系列的太阳能电池使用Roth & Rau的工业异质结工艺在这些晶片上加工。在标准测试条件下，一批14块太阳能电池中最好的太阳能电池的能量转换效率为19.0%（平均值为18.6%），Voc非常高，为725 mV。这些结果尚待独立确认。
Highly purified n-type UMG (“Upgraded Metallurgical”) Silicon is a material with a strong potential for high efficiency low cost solar cells. Compared to p-type Silicon, n-type Silicon is in general less susceptible to lifetime degradation due to residual metal impurities or to light induced degradation due to the Boron-Oxygen complex. In this work a 15kg 6 inch mono-c Cz Silicon ingot has been grown from 100% highly purified UMG Silicon obtained with the PHOTOSIL process. In this feedstock the Boron and Phosphorus concentrations measured by GDMS were found to be 0.3 ppmw and 2 ppmw, respectively. The resulting ingot is n-type, fully mono c1 rystalline and has a resistivity range from 0.2 to 1 ohm.cm. Other impurities, especially metals, were not detectable with the analysis techniques applied (GDMS, ICP-OES). The ingot was cut into 125×125 mm2 pseudo square wafers of 180 micron thickness. A first series of solar cells were processed on these wafers using an industrial hetero-junction process by Roth & Rau. The best solar cell from a batch of 14 had an energy conversion efficiency of 19.0% (compared to an average: 18.6%) under standard testing conditions with a very high Voc of 725mV.. An independent confirmation of these results is pending.