Potential of SiN_X films fabricated by radical-beam deposition technique for passivation of organic devices
Potential of SiN_X films fabricated by radical-beam deposition technique for passivation of organic devices
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自由基束沉积技术制备的 SiN_X 薄膜用于有机器件钝化的潜力
DOI:
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发表时间:
2004
期刊:
影响因子:
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通讯作者:
S.Fujita
中科院分区:
文献类型:
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作者:
T.Yamao;K.Taguchi;M.Yoshimoto;S.Fujita