Band alignment at non-polar AlN/MnS interface investigated by hard X-ray photoelectron spectroscopy
Band alignment at non-polar AlN/MnS interface investigated by hard X-ray photoelectron spectroscopy
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DOI：
10.35848/1347-4065/ab769c
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发表时间：
2020-03
影响因子：
1.5
通讯作者：
Kazunori Kurishima;Kota Tatejima;Y. Yamashita;S. Ueda;K. Ishibashi;Kenichirou Takahashi;Setsu Suzuki-Setsu-Su
中科院分区：
文献类型：
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作者：
Kazunori Kurishima;Kota Tatejima;Y. Yamashita;S. Ueda;K. Ishibashi;Kenichirou Takahashi;Setsu Suzuki-Setsu-Su
用硬X射线光电子能谱研究了AlN/MnS界面的能带排列和界面反应。AlN/MnS/Si（100）堆叠结构是在Si（100）衬底上生长非极性GaN的模板衬底的候选者。对于AlN/MnS的能带排列，MnS缓冲层上的AlN薄膜具有II型能带结构。从AlN到MnS的导带偏移为−0.59 eV。对于AlN/MnS界面的稳定性，S2 s谱随AlN生长温度的变化不明显。形成了氮和硫缺陷。费米能级位置没有表现出生长温度的依赖性，虽然耗尽层形成在AlN的界面处，费米能级移动的间隙方向。AlN的生长温度不影响AlN/MnS的能带偏移。AlN/MnS界面是化学和电学稳定的界面。
The band alignment and interface reaction at the AlN/MnS interface were investigated by hard X-ray photoelectron spectroscopy. The AlN/MnS/Si (100) stack structure is a candidate of a template substrate for the non-polar GaN growth on a Si (100) substrate. For the band alignment of AlN/MnS, the AlN film on MnS buffer layer had a type II band structure. The conduction band offset from AlN to MnS was −0.59 eV. For the interface stability at the AlN/MnS interface, the S 2s spectra showed undistinguishable change regardless of the growth temperature of AlN. The nitrogen and sulfur defects were formed. The Fermi level position did not show the growth temperature dependence, although the depletion layer was formed at the interface of AlN and the Fermi level moved in-gap direction. The growth temperature of AlN did not affect the band offset of AlN/MnS. The AlN/MnS interface was chemically and electrically stable interface.